用不同的方法在石英玻璃,YAG晶体,K9玻璃和LiNbO3晶体等几种衬底上制备了ZrO2,HfO2和TiO2薄膜。HfO2薄膜利用电子束蒸发(EB)、离子束辅助(IAD)和双束离子束溅射(DIBS)三种方法沉积。对其中的一些样品进行了不同温度下的退火处理,对所有的样品进行X射线衍射(XRD)测试,以获得不同条件下得到的薄膜的晶相及晶粒尺寸等的微结构参数。实验结果表明,薄膜的晶相结构以及晶粒尺寸强烈地依赖于沉积过程的各种技术参数,如衬底的种类、沉积温度、沉积方法和退火温度。利用薄膜表面扩散以及薄膜成核长大热力学原理解释了不同技术条件下的晶相结构和晶粒尺寸不同的原因。

Thin films of ZrO2, HfO2 and TiO2 were deposited on several kinds of substrates such as fused silica, YAG, K9 and LiNbO3; HfO2 films were prepared by electron beam (EB) evaporation, ion assisted deposition (IAD) and dual ion beam sputtering (DIBS); then some of them were annealed at different temperatures. X-ray diffraction (XRD) was applied to gain the crystalline phase and the size of crystal grain of these thin films, and the results revealed that their crystallographic structure strongly depended on the technological conditions of the deposition process such as substrate category, deposition temperatures, deposition methods and annealing temperatures. The theory of films growth and diffusion is used to explain the difference of crystallographic structures between these thin films deposited and treated under various conditions.