Nd∶YVO4晶体中掺杂的Nd3+除了1.064 μm的受激辐射跃迁外，还可产生1.342 μm波段的弱辐射，经腔内倍频，最终可输出671 nm的红色激光。报道了一种光纤耦合半导体激光二极管(LD)阵列端面抽运Nd∶YVO4晶体,腔内采用Ⅰ类临界相位匹配LBO(LiB3O5)晶体倍频,实现波长为671 nm的全固态红光激光器瓦级输出的理论分析和实验结果。采用短三镜折叠腔结构，通过对激光晶体热透镜焦距的估算，用计算机优化设计选取了合适的谐振腔参数，在芯径为400 μm的光纤耦合808 nm半导体激光二极管阵列抽运下，当注入功率为8 W时，获得了波长为671 nm的红光基模稳定输出，最高输出功率达1.8 W，光光转换效率达22.5%。

The Nd3+ ion doped in Nd∶YVO4 crystal has a weak laser transition at 1.342 μm in addition to 1.064 μm stimulated transition. The laser at 1.342 μm can be frequencydoubled to obtain red light at 671 nm. In this paper, the analysis and the experiment of a Nd∶YVO4 crystal pumped by 400μm fibercoupled diode array, typeⅠ critical phase matching and intracavity frequencydoubled LBO (LiB3O5) crystal, and red laser at output wavelength of 671 nm were performed. By using a short foldedcavity resonator, the thermal focal length of Nd∶YVO4 crystal was calculated, and the parameters of laser cavity were selected by computer optimum design. At last, with incident pump power of 8 W, TEM00 mode (transverse electromagnetic mode) red laser at 671 nm of 1.8 W was obtained, with the optical conversion efficiency up to 22.5%.