Chinese Optics Letters, 2006, 4 (5): 05297, Published Online: Jun. 6, 2006
Study on electroluminescence from porous silicon light-emitting diode
Abstract
Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.
Yajun Yang, Qingshan Li, Xianyun Liu. Study on electroluminescence from porous silicon light-emitting diode[J]. Chinese Optics Letters, 2006, 4(5): 05297.