Chinese Optics Letters, 2004, 2 (1): 0150, Published Online: Jun. 6, 2006
Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well 
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190.5970 semiconductor nonlinear optics including MQW 190.4400 nonlinear optics materials 190.2620 frequency conversion 190.7110 ultrafast nonlinear optics
Abstract
The third-order susceptibility of In_(x)Ga_(1-x)N/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass Schrodinger equation is solved numerically. It is shown thatthe third-order susceptibility for third harmonic generation (THG) of In_(x)Ga_(1-x)N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics of \chi^(3)_(THG)(-3\omega, \omega, \omega, \omega) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.
Yaochen Bai, Jingliang Liu, Duanzheng Yao. Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well[J]. Chinese Optics Letters, 2004, 2(1): 0150.
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