Chinese Optics Letters, 2004, 2 (12): 12713, Published Online: Jun. 6, 2006
Oxide-apertured VCSEL with short period superlattice Download: 501次
140.5960 semiconductor lasers 140.6810 thermal effects 230.1480 Bragg reflectors 250.7260 vertical cavity surface emitting lasers
Abstract
Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1)As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2 deg. off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 (Celsius degree) and the threshold current increased slowly with the increase of temperature.
Lin Li, Jingchang Zhong, Yongming Zhang, Wei Su, Yingjie Zhao, Changling Yan, Yongqin Hao, Xiaoguang Jiang. Oxide-apertured VCSEL with short period superlattice[J]. Chinese Optics Letters, 2004, 2(12): 12713.