Chinese Optics Letters, 2005, 3 (2): 0273, Published Online: Jun. 6, 2006
Simulation study of the NAσ's dependence of DOF for 193-nm immersion lithography at 65-nm node 
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110.5220 photolithography 070.2580 Fourier optics 220.4830 optical systems design 230.0230 optical devices
Abstract
Recently, ArF immersion lithography has been considered as a promising method after ArF dry lithography by a factor of refractive index n of the liquid filled into the space between the bottom lens and wafer, in the case of 193-nm exposure tools, water (n = 1.44) has been found as the best liquid. We explore the NAσ's dependence of depth of focus (DOF) under 3/4 annular and 3/4 quasar illumination by resist imaging simulation. Line/space pairs of line-to-space ratios 1:1, 1:2, 1:4 on binary mask are considered. Finally, we explored the high NA's dependency of DOF and gave the explanation for the peak value of DOF through three-beam imaging process, MicroCruiser 2.0, Prolith version 8.0.2 and k_2 factor based on the Rayleigh equation.
Guosheng Huang, Yanqiu Li. Simulation study of the NAσ's dependence of DOF for 193-nm immersion lithography at 65-nm node[J]. Chinese Optics Letters, 2005, 3(2): 0273.
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