Chinese Optics Letters, 2005, 3 (8): 08466, Published Online: Jun. 6, 2006
1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes Download: 1020次
Abstract
In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.
Dingli Wang, Ning Zhou, Jun Zhang, Yu Liu, Ninghua Zhu, Linsong Li. 1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes[J]. Chinese Optics Letters, 2005, 3(8): 08466.