Chinese Optics Letters, 2005, 3 (8): 08466, Published Online: Jun. 6, 2006  

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes Download: 1020次

Author Affiliations
1 Wuhan Accelink Technologies Co., Ltd, Wuhan Research Institute of Post and Telecommunication, Wuhan 430074
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract
In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

Dingli Wang, Ning Zhou, Jun Zhang, Yu Liu, Ninghua Zhu, Linsong Li. 1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes[J]. Chinese Optics Letters, 2005, 3(8): 08466.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!