Chinese Optics Letters, 2005, 3 (9): 09533, Published Online: Jun. 6, 2006
A novel coupled quantum well structure with large field-induced refractive index change and low absorption loss at 1.55 μm
160.6000 semiconductors including MQW in materials 190.5970 semiconductor nonlinear optics including MQW in nonlinear optics 160.4760 optical properties
Abstract
A novel coupled quantum well structure --- quasi-symmetric coupled quantum well (QSCQW) is proposed. In the case of low applied electric field (F = 25 kV/cm) and low absorption loss (α ~ 100 cm^(-1)), a large field-induced refractive index change (for TE mode, Δn = 0.0106; for TM mode, Δn = 0.0115) is obtained in QSCQW structure at operating wavelength λ = 1550 nm. The value is larger by over one to two order of magnitude compared to that in a rectangular quantum well (RQW) and about 50% larger than that of five-step asymmetric coupled quantum well (FACQW) structure under the above work conditions.
Zhixin Xu, Qiang Zhou, Xiaoqing Jiang, Xihua Li, Jianyi Yang, Minghua Wang. A novel coupled quantum well structure with large field-induced refractive index change and low absorption loss at 1.55 μm[J]. Chinese Optics Letters, 2005, 3(9): 09533.
PDF全文
