光电子技术, 2001, 21 (1): 36, 网络出版: 2006-06-08
n-ZnO/p-Si异质结J-V特性的实验研究
The Experimental Study on J-V Characteristic of n-ZnO/p-Si Heterojunction
摘要
本文首次报道n-ZnO/p-Si异质结J-V特性实验测量的初步结果--经退火处理的异质结反向饱和电流密度比未经退火的减少一个数量级,表明退火改善ZnO/Si晶格界面结构,提高了n-ZnO/p-Si异质结性能.
Abstract
The experimental results of J-V characteristic of n-ZnO/p-Si heterojunction are first reported—the reverse saturation current density of annealed n-ZnO/p-Si heterojunction reduces by 10 times as compared with that of unannealed. It indicates that due to annealing treatment, the ZnO/Si interface structure and performance of n-ZnO/p-Si heterojunction are improved.
林鸿生, 马雷, 付竹西. n-ZnO/p-Si异质结J-V特性的实验研究[J]. 光电子技术, 2001, 21(1): 36. 林鸿生, 马雷, 付竹西. The Experimental Study on J-V Characteristic of n-ZnO/p-Si Heterojunction[J]. Optoelectronic Technology, 2001, 21(1): 36.
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