中国激光, 2003, 30 (8): 684, 网络出版: 2006-06-27
InGaAs/AlGaAs半导体激光器二维阵列
InGaAs/AlGaAs Semiconductor Laser 2-D Arrays
激光技术 半导体激光器 金属有机化合物气相淀积 二维阵列 分别限制单量子阱 laser technique semiconductor laser metal organic chemical vapor deposition (MOCVD) 2-D array separate confinement heterostructure single quant
摘要
用金属有机化合物气相淀积(MOCVD)技术外延生长了InGaAs/AlGaAs分别限制应变单量子阱激光器材料.利用该材料制成半导体激光器一维线阵列,然后再串联组装成二维阵列,在1000 μs的输入脉宽下,输出峰值功率达到730 W(77 A),输出光功率密度为487 W/cm2,中心激射波长为903 nm,光谱半宽(FWHM)为4.4 nm.在此条件下可以稳定工作8600 h以上.
Abstract
Materials of InGaAs/AlGaAs separate confinement heterostructure strained single quantum well were grown by the technology of metal organic chemical vapor deposition (MOCVD). The 1 D semiconductor laser linear arrays were made using this materials,then they were assembled to form 2 D array. It′s peak wavelength is 903 nm, the full width at half maximum (FWHM) is 4 4 nm, the peak output power is 730 W (pulse width 1000 μs, drive current 77 A), and the density of output power is 487 W/cm 2. The laser can work very reliably over 8600 hours in this condition.
辛国锋, 陈国鹰, 冯荣珠, 花吉珍, 安振峰. InGaAs/AlGaAs半导体激光器二维阵列[J]. 中国激光, 2003, 30(8): 684. 辛国锋, 陈国鹰, 冯荣珠, 花吉珍, 安振峰. InGaAs/AlGaAs Semiconductor Laser 2-D Arrays[J]. Chinese Journal of Lasers, 2003, 30(8): 684.
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