中国激光, 2003, 30 (9): 852, 网络出版: 2006-06-27
自由电子激光辐照半导体多量子阱的研究
Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells
激光技术 量子阱 自由电子激光辐照 低温光荧光谱 红移 laser technique quantum well free electron laser irradiation photoluminescence spectra red shift
摘要
利用低温光荧光谱研究了自由电子激光辐照对GaAs/AlGaAs多量子阱光学性质的影响.用波长为8.92 μm,光功率密度相应于电场强度为20 kV/cm的自由电子激光辐照多量子阱60 min,发现量子阱特征峰797 nm经过辐照后峰值发生红移至812 nm,波形展宽,峰高降低.对此结果进行了讨论,并与电子辐照的情况做了比较.
Abstract
Photoluminescence (PL) was observed from GaAs/AlGaAs quantum wells structure excited by mid-infrared free electron laser (FEL) irradiation. The experimental results showed that the characteristic PL peak of quantum wells was shifted to longer wavelength (red shift) and the intensity was decreased much after FEL irradiation. The results are discussed and compared with that of electron irradiation.
邹睿, 林理彬, 张猛, 张国庆, 李永贵. 自由电子激光辐照半导体多量子阱的研究[J]. 中国激光, 2003, 30(9): 852. 邹睿, 林理彬, 张猛, 张国庆, 李永贵. Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells[J]. Chinese Journal of Lasers, 2003, 30(9): 852.