Chinese Journal of Lasers B, 1999, 8 (5): 397, 网络出版: 2006-08-08
High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers
High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers
摘要
Abstract
By low-pressure metalorganic chemical vapor deposition (LP-MOCVD) system,InGaAs/AlGaAs graded-index separate-confinement heterostructure strained quantum well lasers are grown with carbon doped the upper cladding layer and the capping layer. Carbon tetracholride (CCl4) is used as the carbon source. 100 μm oxide stripe lasers are fabricated,and the laser output power per facet (uncoated) reaches 1.2 W with 2A injection current under the room temperature continuous wave (CW) operation. The threshold current density is 150 A/cm2 with 1000 μm cavity length. The slope efficiency per facet reaches 0.53W/A,and the total external differential quantum efficiency is above 85%. The relations between the threshold current densities,the differential quantum efficiency and the cavity length are studied.
YIN Tao, DU Jinyu, LIAN Peng, XU Zuntu, CHEN Changhua, GUO Weiling, LIU Ying, LI Shuang, GAO Guo, ZOU Deshu, CHEN Jianxin, SHEN Guangdi, MA Xiaoyu, CHEN Lianghui. High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers[J]. Chinese Journal of Lasers B, 1999, 8(5): 397. YIN Tao, DU Jinyu, LIAN Peng, XU Zuntu, CHEN Changhua, GUO Weiling, LIU Ying, LI Shuang, GAO Guo, ZOU Deshu, CHEN Jianxin, SHEN Guangdi, MA Xiaoyu, CHEN Lianghui. High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers[J]. 中国激光(英文版), 1999, 8(5): 397.
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