Chinese Journal of Lasers B, 1999, 8 (1): 7, 网络出版: 2006-08-08
Experimental Study on Semiconductor Optical Amplifiers with Angled Facets
Experimental Study on Semiconductor Optical Amplifiers with Angled Facets
摘要
Abstract
1.3 μm semiconductor optical amplifier (SOA) with angled facets has been studied. Because of the angled facets, the overlap of the reflective light and the guided mode is reduced, which causes the reduction of the effective reflectivity. After antireflective (AR) coating, less than 10-4 reflectivity has been realized, and 25 dB gain of the SOA with a 400 μm cavity length has been obtained.
DUAN Zigang, HUANG Dexiu, LIU Deming, ZHANG Zemin. Experimental Study on Semiconductor Optical Amplifiers with Angled Facets[J]. Chinese Journal of Lasers B, 1999, 8(1): 7. DUAN Zigang, HUANG Dexiu, LIU Deming, ZHANG Zemin. Experimental Study on Semiconductor Optical Amplifiers with Angled Facets[J]. 中国激光(英文版), 1999, 8(1): 7.
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