Chinese Journal of Lasers B, 2000, 9 (4): 303, 网络出版: 2006-08-08
Study on the Near Field of the Semiconductor Laser by Using Scanning Near Field Optical Microscope
Study on the Near Field of the Semiconductor Laser by Using Scanning Near Field Optical Microscope
摘要
Abstract
The near field of a semiconductor laser was measured by using a Scanning Near Field Optical Microscope (SNOM). The near field emission was recorded during the scanning of the fibre tip above the facet of the semiconductor laser at a distance less than 20 nm. By controlling the shear force the topography of the facet was recorded simultaneously. The waist radius, the divergence and the M2-factor of the semiconductor laser were obtained by measuring the beam images in different positions along the propagation.
GAO Chunqing, RENG Norbert. Study on the Near Field of the Semiconductor Laser by Using Scanning Near Field Optical Microscope[J]. Chinese Journal of Lasers B, 2000, 9(4): 303. GAO Chunqing, RENG Norbert. Study on the Near Field of the Semiconductor Laser by Using Scanning Near Field Optical Microscope[J]. 中国激光(英文版), 2000, 9(4): 303.