Chinese Journal of Lasers B, 2002, 11 (1): 9, 网络出版: 2006-08-08
High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
摘要
Abstract
The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 μm broad-area laser diodes has been measured, and is 2.5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1.7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19% fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.
FANG Gaozhan, XIAO Jianwei, MA Xiaoyu, XU Zuntu, ZHANG Jinming, TAN Manqing, LIU Zongshun, LIU Suping, FENG Xiaoming. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J]. Chinese Journal of Lasers B, 2002, 11(1): 9. FANG Gaozhan, XIAO Jianwei, MA Xiaoyu, XU Zuntu, ZHANG Jinming, TAN Manqing, LIU Zongshun, LIU Suping, FENG Xiaoming. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J]. 中国激光(英文版), 2002, 11(1): 9.
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