报道了分子束外延生长Hg0.68Cd0.32Te材料的光致发光测量结果。 研究了原生样品和退火处理样品、 以及氮离子注入样品的低温光致发光特征。 对光致发光的测试结果进行拟合得到的禁带宽度, 与用红外透射谱得到的薄膜禁带宽相近； 其半峰宽和带尾能量较小, 显示了较高的薄膜质量。 样品经过退火后带尾能量降低, 双晶衍射的半峰宽也有明显的变窄。

By using photoluminescences (PL), the molecular beam epitaxy (MBE) grown Hg1-xCdxTe (x=0.32) epilayers are studied. The PL measurement shows a strong near band edge emission peak with an FWHM of 5 meV and a small broadening energy, E0(4.2 K)=1.3 meV, which indicates the high quanlity was obtained. Comparing the results of as-grow and annealing sample shows that annealing sample has a better crystal quality than the as-grow sample.