研究了直接耦合混合应变量子阱半导体光放大器(SOA)的噪声特性。实验中测定SOA在130 mA偏置电流下的噪声指数为7.7 dB,表明应变量子阱结构改善了SOA的噪声性能。理论分析指出,通过消除SOA的剩余反射,其噪声性能可以得到进一步改善。

The noise character of strained MQW semiconductor optical amplifier has been studied in the paper. 7.7 dB noise figure of SOA directly coupled with fiber in both ends at 130 mA bias current shows that the noise character of SOA is improved by strained quantum well structure. Theoretical study explains experimental result and shows that the noise figure of SOA can be further improved by reducing residual reflectivity.