中国激光, 2000, 27 (12): 1072, 网络出版: 2006-08-09
GaAlAs/GaAs单量子阱列阵半导体激光器
GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers
摘要
分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长法生长出GaAlAs/GaAs梯度折射率分别限制单量子阱材料(GRIN-SCH-SQW)。利用该材料制作出的列阵半导体激光器输出功率达到10 W(室温,连续),峰值波长为806～809 nm。
Abstract
In this paper,the factors influencing the ultimate output power of laser diodes are analyzed.The GaAlAs/GaAs material with gradient refraction index,separate confinement single quantum well structure has been grown by MBE.The CW output power of the array diode laser is 10 W.The peak wavelength is 806～809 nm.
曲轶, 高欣, 张宝顺, 薄报学, 张兴德, 石家纬. GaAlAs/GaAs单量子阱列阵半导体激光器[J]. 中国激光, 2000, 27(12): 1072. 曲轶, 高欣, 张宝顺, 薄报学, 张兴德, 石家纬. GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers[J]. Chinese Journal of Lasers, 2000, 27(12): 1072.
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