光学学报, 2000, 20 (5): 592, 网络出版: 2006-08-09
半导体垂直腔面发射激光器的微腔效应
Micro-Cavity Effect in Vertical Cavity Semiconductor Surface Emitting Lasers
半导体垂直腔面发射激光器 自发发射 金属反射镜 分布布拉格反射镜。 vertical cavity semiconductor surface emitting las spontaneous emission metal reflector distributed Bragg reflectors.
摘要
应用腔量子电动力学和半导体物理学讨论了半导体垂直腔面发射激光器的微腔效应,得到了实际腔结构和注入载流子下的半导体垂直腔面发射激光器的自发发射谱,计算结果表明,半导体分布布拉格反射垂直腔激光器的单方向自发发射可以增强约200倍。
Abstract
Based on cavity quantum electrodynamics and physics of semiconductor,the micro-cavity effect in a vertical cavity semiconductor surface emitting laser has been discussed.The spontaneous emission spectra in the vertical cavity semiconductor surface emitting lasers are obtained.As a result,spontaneous emission intensity in one direction can be enhanced about 200 times by the confinement the photon with distributed Bragg reflectors because the micro-cavity effect in the lasers.
赵红东, 赵红东, 赵红东, 沈光地, 张存善, 周革, 张以谟. 半导体垂直腔面发射激光器的微腔效应[J]. 光学学报, 2000, 20(5): 592. 赵红东, 赵红东, 赵红东, 沈光地, 张存善, 周革, 张以谟. Micro-Cavity Effect in Vertical Cavity Semiconductor Surface Emitting Lasers[J]. Acta Optica Sinica, 2000, 20(5): 592.