光学学报, 2000, 20 (6): 847, 网络出版: 2006-08-09
GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究
Raman Spectra and Optical Absorption Spectra of GaAs/SiO2Nanocrystals Embedded Thin Films
摘要
采用射频磁控共溅射与高真空退火相结合的方法, 分别在单晶硅片和光学石英玻璃片上制备了GaAs/SiO2纳米晶镶嵌薄膜样品。 激光拉曼光谱的测量结果表明, 退火态样品;400℃, 60 min 的拉曼光谱特征峰呈现宽化和红移, 红移量为9.5 cm-1, 对应薄膜中GaAs纳米晶粒平均粒径约为3 nm。 样品的室温吸收光谱测量结果表明, 由于受量子限域效应的主导作用, 与GaAs块状单晶相比, 样品光学吸收边呈现出明显的蓝移, 蓝移量为1.78 eV, 而且在吸收光谱上还出现了若干可分辨的吸收峰。
Abstract
GaAs/SiO2nanocrystals embedded thin films have been prepared on silicon (111) wafers and optical silica plates by radio-frequency magnetron cosputtering technique and post-annealing at 673 K in vacuum. Raman spectroscopy strongly suggest the existence of GaAs nanocrystals being 3 nm in average size dispersed in SiO2 thin films. Compared with that of the bulk GaAs crystals, the optical absorption edge of GaAs nanocrystals exhibits a blue shift as large as 1.78 eV, and a few absorption peaks, which are mainly caused by the quantum confinement effect.
王浩, 杨恢东, 丁瑞钦. GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究[J]. 光学学报, 2000, 20(6): 847. 王浩, 杨恢东, 丁瑞钦. Raman Spectra and Optical Absorption Spectra of GaAs/SiO2Nanocrystals Embedded Thin Films[J]. Acta Optica Sinica, 2000, 20(6): 847.