运用一种新的测量单面镀膜膜层光学参数的方法, 对不同热处理的GeTe半导体薄膜样品的光学参数进行了测量, 准确地获得了被测薄膜材料的光学参数, 并采用椭圆偏振光谱测量作比较研究。 以此为基础, 对用椭偏仪测得的数据进行拟合计算, 得出了样品材料在250～830 nm波段范围的复折射率曲线。

The optical parameters of GeTe semiconductor films prepared and annealed at different temperatures have been measured by using a new method. A compared study by means of using a spectrum ellipsometer is presented. The optical parameters of the samples are obtained through the processes of data simulation and correction of the old calculation model. In the meantime, the data calculations of the same samples measured by a spectrum ellipsometer are presented, and the complex refractive index curves of them in the spectrum range from 250 nm to 830 nm are obtained.