The Ag-In-Sb-Te phase-change films were deposited on K9 glass substrates by RF magnetron sputtering technology with an Ag-In-Sb-Te alloy target. The spectral properties and short-wavelength optical storage properties of Ag8In13Sb55Te23 films were studied. X-ray diffraction results have indicated that the crystallization compounds include mainly AgSbTe2 with small amounts of Sb and AgInTe2. A comparatively large absorption has been observed in the visible wavelength range. The optical storage characteristics of Ag8In13Sb55Te23 thin films indicated that larger reflectivity contrast can be obtained at lower writing power and shorter writing pulse width.