Chinese Journal of Lasers B, 2001, 10 (1): 57, 网络出版: 2006-08-10
Nonlinear Absorption Properties of nc-Si:H Thin Films
摘要
Abstract
It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.
GUO Zhenning, GUO Hengqun, LI Shichen, HUANG Yongzhen, WANG Qiming. Nonlinear Absorption Properties of nc-Si:H Thin Films[J]. Chinese Journal of Lasers B, 2001, 10(1): 57. GUO Zhenning, GUO Hengqun, LI Shichen, HUANG Yongzhen, WANG Qiming. [J]. 中国激光(英文版), 2001, 10(1): 57.
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