激光与光电子学进展, 2006, 43 (8): 13, 网络出版: 2006-08-31
浸没式光刻技术的研究进展 下载: 1829次
Development of Immersion Lithography
光刻 浸没式光刻 投影物镜 浸没液体 偏振光照明 气泡 lithography immersion lithography projection lens immersion fluid polarized illumination bubbles
摘要
浸没式光刻技术是将某种液体充满投影物镜最后一个透镜的下表面与硅片之间来增加系统的数值孔径, 可以将193 nm光刻延伸到45 nm节点以下。阐述了浸没式光刻技术的原理, 讨论了液体浸没带来的问题, 最后介绍了浸没式光刻机的研发进展。
Abstract
Immersion lithography uses some kind of fluid filling the space between the bottom surface of the last lens and wafer, to enlarge the numerical aperture of system and will extend the 193nm lithography below 45nm node. The principle of immersion lithography is analyzed, several fundamental issues of immersion lithography are discussed, and development status of the immersion lithographic tools is described.
袁琼雁, 王向朝, 施伟杰, 李小平. 浸没式光刻技术的研究进展[J]. 激光与光电子学进展, 2006, 43(8): 13. 袁琼雁, 王向朝, 施伟杰, 李小平. Development of Immersion Lithography[J]. Laser & Optoelectronics Progress, 2006, 43(8): 13.