提出一种新型基于Si₂N₂O基体的LiNbO₃行波调制器，利用有限元方法对该调制器进行数值分析并获得调制器的优化结构尺寸．该新型调制器带宽达到120GHz，半波电压为3．5V，特性阻抗为50．2Ω．结果表明该调制器具有大的调制带宽和良好的阻抗匹配，在未来光通信中具有很好的应用前景．

A novel LiNbO₃ modulator based on Si₂N₂O substrate is proposed. Using the finite element method,the proposed modulator has been analyzed. The optimum structure parameters of the novel modulator are obtained. The modulator operates with a 3 dB optical bandwidth of 120 GHz,a half-wave driving voltage of 3.5 V,and characteristic impedance of 50.32Ω. The results show that broad bandwidth and low half-wave voltage can be achieved simultaneously. It is a promising candidate for future ultra-high-speed optical fiber transmission system.