中国激光, 1998, 25 (4): 369, 网络出版: 2006-10-18
GaN/Al2O3(0001)的匹配机制及氮化的作用
Epitaxial Matching Orientations of GaN with Bare and Nitridated Al2O3(0001) Substrates
摘要
在Al2O3(0001)衬底上用MOCVD(金属有机物气相沉积)方法进行了GaN的外延生长,通过X射线衍射(同步辐射源)研究了GaN和Al2O3(0001)的匹配关系。结果表明,经充分氮化的衬底上,GaN以单一的匹配方式沿[0001]方向生长;在Al2O3(0001)衬底未经氮化或氮化不充分时,不同程度地出现了其它三种绕〈1120〉晶带轴倾斜一定角度的匹配位向。指出了GaN/Al2O3(0001)的几种匹配方式的晶体学规律。GaN绕〈1120〉晶带轴倾斜的匹配方式是其外延生长过程中降低和Al2O3(0001)的晶格失配、释放界面应变的重要机制之一。
Abstract
GaN thin films were grown by metal organic chemical vapor deposition on Al 2O 3(0001) substrates, the epitaxial relationships between GaN and Al 2O 3(0001) were examined by a X ray(synchrotron radiation source) diffraction method. Results revealed that GaN grown on the well nitridated substrates exhibited the popular crystallographic orientation with direction perpendicular to the Al 2O 3(0001), while those grown on the bare or insufficiently nitridated substrates proved to have three other orientations which rotated by certain angles around its <1120>in respect to the popular one. The orientation tiltings were suggested to be one of the inportant mechanisms by which GaN films could match better with Al2O3(0001) substrates and relax the interfacial strain effectively.
徐科, 邓佩珍, 邱荣生, 徐军, 方祖捷. GaN/Al2O3(0001)的匹配机制及氮化的作用[J]. 中国激光, 1998, 25(4): 369. 徐科, 邓佩珍, 邱荣生, 徐军, 方祖捷. Epitaxial Matching Orientations of GaN with Bare and Nitridated Al2O3(0001) Substrates[J]. Chinese Journal of Lasers, 1998, 25(4): 369.