中国激光, 1998, 25 (6): 495, 网络出版: 2006-10-18
用超短光脉冲测量半导体微波器件的S参数
S-parameters Measurement of Semiconductor Microwave Devices by Ultrashort Optical Pulses
摘要
描述了用超短光脉冲测量微波器件S参数的基本原理和建立的测量系统。用该系统测量了频率高达36 GHz器件的S参数, 并同网络分析仪的测量结果进行了比较, 一致性很好。该系统测量频率可达100 GHz。
Abstract
The principle to measure S-parameters of microwave devices with ultrashort optical pulses has been described. The measuring system with a maximum frequency up to 100 GHz has been developed. We have measured the devices with a frequency of 36 GHz. The results agree well with those measured by using a network analyzer.
袁树忠, 潘家齐, 吕福云, 范万德, 李献元. 用超短光脉冲测量半导体微波器件的S参数[J]. 中国激光, 1998, 25(6): 495. 袁树忠, 潘家齐, 吕福云, 范万德, 李献元. S-parameters Measurement of Semiconductor Microwave Devices by Ultrashort Optical Pulses[J]. Chinese Journal of Lasers, 1998, 25(6): 495.