中国激光, 1998, 25 (1): 21, 网络出版: 2006-10-18
InGaAsP/GaAs单量子阱SCH半导体激光器的液相外延
LPE of InGaAsP/GaAs Semiconductor Lasers
摘要
利用一种改进的液相外延技术进行了GaAs衬底上InGaAsO材料的生长,10 K温度下光荧光半宽度(FWHM)为14 MeV,获得了阈值电流密度为300 A/cm2的SCH多层结构外延片,宽台面激光器最大连续输出功率达到2.1 W。
Abstract
A modified liquid phase epitaxy method was used to grow InGaAsP materials on the GaAs substrate. The FWHM of photoluminescence at 10 K was 14 meV, wafers of SCH multilayer epitaxial structures were obtained with a threshold current density of 300 A/cm 2, and the hgihest CW output power obtained from wide stripe lasers was 2.1 W.
薄报学, 朱宝仁, 张宝顺, 高欣, 任大翠, 张兴德. InGaAsP/GaAs单量子阱SCH半导体激光器的液相外延[J]. 中国激光, 1998, 25(1): 21. 薄报学, 朱宝仁, 张宝顺, 高欣, 任大翠, 张兴德. LPE of InGaAsP/GaAs Semiconductor Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 21.
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