中国激光, 2006, 33 (10): 1297, 网络出版: 2006-10-31
半导体可饱和吸收镜调Q的Yb∶LSO激光器
Laser Diode-Pumped Q-Switched Yb∶LSO laser with a Semiconductor Saturable Absorber Mirror
激光器 半导体可饱和吸收镜调Q 激光材料 半导体抽运 lasers semiconductor saturable absorber mirror Q-switche laser materials laser diode-pumped
摘要
报道了一个激光二极管(LD)抽运多波长连续输出的激光器和一个被动调Q的固体激光器。该激光器的增益材料是一种新型掺Yb3+的晶体Yb3+∶Lu2SiO5(Yb∶LSO)。当吸收的抽运功率为2.57 W时,连续输出的最大功率为490 mW,斜率效率为22.2%,光-光转换效率为14.2%,激光阈值为299 mW,输出激光波长为1084 nm。多波长输出时,波长调谐范围为1034～1085 nm。利用InGaAs可饱和吸收镜实现调Q输出时, 斜率效率为3.0%,激光波长为1058 nm。脉冲重复频率为25～39 kHz,重复频率随着抽运功率的增加而增加。
Abstract
New Yb-doped crystal Yb3+∶Lu2SiO5 (Yb∶LSO) lasers pumped by diode-laser at 976 nm with passively Q-switched and multi-wavelength continuous-wave (CW) output were demonstrated. The maximum CW output power was 490 mW with the absorbed pump power of 2.57 W. The slope efficiency and optical-optical conversion efficiency were 22.2% and 14.2% respectively. The threshold was 299 mW, and the laser wavelength was 1084 nm. The wavelength could be tunable from 1034 to1085 nm with a prism. For the Q-switched output, the laser operated at 1058 nm with an InGaAs semiconductor saturable absorber mirror (SESAM). The Q-switched output slope efficiency of 3.0% with the maximum absorbed pump power of 1.73 W was also obtained. The pulse repetition rate was 25～39 kHz and was increased with the pump power increased.
宋晏蓉, 胡江海, 周劲峰, 赵广军, 严成锋, 苏良碧, 徐军, 郭凯, 张志刚. 半导体可饱和吸收镜调Q的Yb∶LSO激光器[J]. 中国激光, 2006, 33(10): 1297. 宋晏蓉, 胡江海, 周劲峰, 赵广军, 严成锋, 苏良碧, 徐军, 郭凯, 张志刚. Laser Diode-Pumped Q-Switched Yb∶LSO laser with a Semiconductor Saturable Absorber Mirror[J]. Chinese Journal of Lasers, 2006, 33(10): 1297.
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