报道了常压金属有机化学汽相淀积(MOCVD)制备的Zn0.7Cd0.3Se/ZnSe单量子阱的光泵浦受激发射性质。在77 K下观测到了n=2的重空穴激子发光峰和n=1的重空穴激子吸收峰。在77 K脉冲激光泵浦下受激发射阈值功率密度为116 kw/cm2。认为受激发射机理可能是激子局域态的空间填充。

A well-defined n=1 heavy-hole exeiton absorption peak from a loealized state and n=2 heavy-hole exeiton emission peak was observed in a ZnCdSe/ZnSe single quantum well structures at 77 K. The localized state was formed by fluctuation of well-barrier interfaces. Stimulated emission was observed from the localized state. The gain originate from exeiton phase space fill of these state. An optical excitation threshold around 116 kW/cm2 was measured. The gain switching was observed. These results were obtained from photoluminescence under oaring excitation power, and luminescence decay experiments.