激光与光电子学进展, 2006, 43 (11): 28, 网络出版: 2006-11-20
半导体激光诱导液相腐蚀精度的提高方法
Improvements of Semiconductor Etching Precision by Laser Assisted Wet Etching
摘要
从半导体激光诱导液相腐蚀的工艺原理出发，对影响刻蚀精度的主要因素进行了分析研究，从刻蚀图像分辨率、侧壁垂直度及底面平坦度、表面均匀化三个方面提出了改善刻蚀精度的方法。
Abstract
The main factors which affect the precision of semiconductor etching precision by laser assisted wet etching(LAWE )are analyzed from the angle of techniques. And improving means are brought forward, in the aspects of etching resolution, perpendicularity of the side wall, smoothness of the bottom, and equalizing of the surface.
谢兴盛, 陈镇龙, 叶玉堂, 刘霖, 吴云峰, 范超, 王昱琳. 半导体激光诱导液相腐蚀精度的提高方法[J]. 激光与光电子学进展, 2006, 43(11): 28. 谢兴盛, 陈镇龙, 叶玉堂, 刘霖, 吴云峰, 范超, 王昱琳. Improvements of Semiconductor Etching Precision by Laser Assisted Wet Etching[J]. Laser & Optoelectronics Progress, 2006, 43(11): 28.
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