Chinese Journal of Lasers B, 1996, 5 (4): 341, 网络出版: 2006-12-04
Optical Recording Performance of In47Sb14Te39Phase Change Thin Films using 514.5 nm Wavelength Laser Beam
Optical Recording Performance of In47Sb14Te39Phase Change Thin Films using 514.5 nm Wavelength Laser Beam
摘要
Abstract
Optical absorption spectra of In47Sb14Te39 thin films preared by D. C. magnetron sputtering method are studied. A compeatively large adoption has been oberved in the wavelength region of 400～600 μm which matches with the wavelength of Algon laser.X-ray diffraction and DSC results indicate that the crystallization compounds include mainly In3SbTe2 with small amounts of InTe,In2Te3. Optical recording ted of the films show clearlythat larser reflectivity contrast can be obtained at lower Argon laser (514.5 nm) irradiation. The Earsing contrast is comparatively lower but can be improved by multi-films match.
MEN Liqiu, JIANG Fusong, GAN Fuxi. Optical Recording Performance of In47Sb14Te39Phase Change Thin Films using 514.5 nm Wavelength Laser Beam[J]. Chinese Journal of Lasers B, 1996, 5(4): 341. MEN Liqiu, JIANG Fusong, GAN Fuxi. Optical Recording Performance of In47Sb14Te39Phase Change Thin Films using 514.5 nm Wavelength Laser Beam[J]. 中国激光(英文版), 1996, 5(4): 341.
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