Chinese Journal of Lasers B, 1996, 5 (4): 375, 网络出版: 2006-12-04  

Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO2

Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO2
作者单位
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
摘要
Abstract
LiGaO2 is a new perferred substrate for the epitaxial growth of GaN visibleLEDs and laser diodes. The large-sized and high-quality single crystals of LiGaO2 up to 15mmin diameter and 50mm in length were grown by the Czochralski method. The crystal morphology of all developing facets was investigated.

HUANG Weiming, XU Jun, WU Guangzhao, DENG Peizhen, GAN Fuxi. Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO2[J]. Chinese Journal of Lasers B, 1996, 5(4): 375. HUANG Weiming, XU Jun, WU Guangzhao, DENG Peizhen, GAN Fuxi. Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO2[J]. 中国激光(英文版), 1996, 5(4): 375.

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