Chinese Journal of Lasers B, 1996, 5 (2): 97, 网络出版: 2006-12-04  

New Approach to Investigation of Tunable External Cavity Semiconductor Lasers

New Approach to Investigation of Tunable External Cavity Semiconductor Lasers
作者单位
1 Southwest Jiaotong University, Chengdu 610031
2 Sichuan University, Chengdu 610061
摘要
Abstract
Based on the expression of the output spectrum of a two-sub-cavity semiconductor laser deduced with the ray trace method, the external cavity semiconductor laser (ECLD) has been investigated. Modifications of such predicted laser charactcristics as the nominal threshold carrier density,resonant wavelengths etc. by the reflection at the diode facet facing the external reflector have been addressed, and the required reflectivity at the AR coated facet to achieve a quasi-continuous tunability is also quantified.

LU Hongchang, LUO Bin, ZHOU Xiaohong, CHEN Jianguo. New Approach to Investigation of Tunable External Cavity Semiconductor Lasers[J]. Chinese Journal of Lasers B, 1996, 5(2): 97. LU Hongchang, LUO Bin, ZHOU Xiaohong, CHEN Jianguo. New Approach to Investigation of Tunable External Cavity Semiconductor Lasers[J]. 中国激光(英文版), 1996, 5(2): 97.

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