激光与光电子学进展, 2006, 43 (12): 36, 网络出版: 2006-12-30
g- LiAlO2衬底上生长GaN的研究进展
Developments of GaN Grown on g- LiAlO2Substrate
摘要
g-LiAlO2与GaN的晶格失配很小,易于分离,在其(100)面上能生长出无极性的GaN,是一种很有希望的GaN衬底材料。结合g-LiAlO2的基本性质,详细介绍了g- LiAlO2衬底上用各种方法生长GaN的研究进展。
Abstract
g-LiAlO2, as a very promising substrate, shows small lattice mismatch with GaN and can separate from GaN easily. Most importantly, nonpolar M-plane GaN can be grown on g-LiAlO2(100) plane. Combined with basic properties of g-LiAlO2, the research developments of GaN grown on g-LiAlO2 substrate by different methods are reviewed in detail.
黄涛华, 邹军, 周健华, 王军, 张连翰, 周圣明. g- LiAlO2衬底上生长GaN的研究进展[J]. 激光与光电子学进展, 2006, 43(12): 36. 黄涛华, 邹军, 周健华, 王军, 张连翰, 周圣明. Developments of GaN Grown on g- LiAlO2Substrate[J]. Laser & Optoelectronics Progress, 2006, 43(12): 36.