采用CF4, CHF3, Ar三种工艺气体进行小尺寸CCD接触孔刻蚀实验, 研究了不同气体配比、不同射频功率对刻蚀速率、选择比、条宽控制、侧壁形貌等参数的影响。通过优化工艺参数, 比较刻蚀结果, 最终获得了适合于刻蚀CCD小孔的工艺条件。

Oxide etching experiments of small contact holes in charge coupled devices were performed using CF4,CHF3 and Ar as the etching gases. The effects of different etching gase ratio and RF power on the four parameters of etching rate, selectivity, side wall profile and stripe width control were researched. By optimizing process parameters and analyzing different etching results, the optimal etching process of contact holes in CCD was obtained.