通过在硼扩散后增加一步800℃、5min的氧化工艺, 使得硼扩散过程中产生的硼硅玻璃能够去除干净, 在去除硼硅玻璃后的硅片上生长的氧化层厚度均匀、可控, 有利于提高器件的光响应均匀性。

Through adding an oxidation process of 5min at 800℃, the borosilicate glass(BSG)generated in Boron diffusion can be fully cleaned, and the thickness of the oxide layer grown on the BSG fully cleaned silicon wafer is uniform and controllable, and this is useful for improving the light response uniformity of photodetectors.