本文采用飞秒激光在空气中对单晶硅进行扫描处理, 在硅表面制备出平行排列并具有微尺度沟槽的黑硅材料。在扫描电子显微镜下, 观察到了黑硅的纳米尺度的二级结构。通过黑硅的反射光谱发现, 在250~1000 nm光谱区域的反射率明显降低, 且沟槽越深, 反射率越低。同时, 对沟槽深度与反射率的关系以及二级纳米结构的形貌进行了讨论。通过黑硅的拉曼光谱发现, 飞秒激光处理后的硅片没有发生成分和结构上的变化, 黑硅的成分依然是单晶硅。

The monocrystalline silicon samples are processed by femtosecond laser in air to obtain the black silicon where microscale grooves arranged in parallel. The nanoscale-secondary structures are observed with the scanning electron microscope. Through the reflection spectrum of black silicon, the reflectivity is significantly decreased in the range of 250~1000 nm and the deeper grooves, the lower reflectivity. In addition, the relationship between the depth of grooves and the reflectivity is discussed. The morphologies of nanoscale-secondary structures are also discussed. Through the Raman spectrum of black silicon, the component and structure of the silicon samples processed by femtosecond laser are unchanged. The black silicon are still monocrystalline silicon.