针对半导体器件、电路、电子系统的高功率微波效应，提出了一套全新的多层次多物理场协同计算方法。该算法基于半导体器件的物理结构模型，联立并求解由电磁场、半导体物理和热力学方程构成的多物理场方程组，实现了器件级高功率微波效应的仿真; 通过器件多物理场仿真和电路仿真的协同计算完成电路级效应仿真; 最后进行电路效应和电磁环境的协同计算，获取由多个电路、外壳封装、孔缝和线缆等组成的电子系统的高功率微波效应数据。介绍了该算法的原理和流程，以商业PIN二极管为例，计算了该器件及组成限幅器电路的温度效应、正向恢复特性、半封闭腔体内空间微波辐射等效应，通过与实验测试的对比验证了算法的正确性，同时对效应现象给出了物理机理解释。

A novel multi-layer and multi-physics co-simulation algorithm is proposed for analyzing the effect of high power microwave (HPM) on semiconductors, circuits and electronic systems. This algorithm is based on semiconductors’ physical model to realize the simulation of semiconductors, and the model is constituted of multi-physic equations, electromagnetic equations, semiconductor physics and thermal equations. A co-simulation method is employed, which incorporates the multi-physics simulation for semiconductors into the equivalent-model based circuit simulation, thus the simulation is extended from semiconductors to circuits. The algorithm achieves the simulation for the HPM effect on electronic systems, by incorporating the multi-physics simulation for circuits with the electromagnetic field simulation. The electronic systems include several circuits, packaging, slot coupling and cable coupling. The principle and procedure of the algorithm is introduced. The proposed algorithm is used to simulate circuits and electronic systems containing commercial P-I-N diodes for various HPM effects, including temperature effect, forward recovery effect and spatial radiation effect in a semi-enclosed cavity. By comparing the simulation results to the measurements, the feasibility and accuracy of the proposed algorithm are validated. Moreover, the proposed algorithm provides clear and intuitive interpretation of the physical mechanism for those HPM effects.