利用有源传输线模型与漂移-扩散模型的耦合计算模型，对在瞬态X射线辐照下电缆末端典型N+-p-n-N+结构的双极晶体管负载的毁伤效应与规律进行研究，通过分析双极晶体管内部晶格温度分布，判定是否处于毁伤状态，总结双极晶体管烧毁时间和烧毁所需能量与脉冲X射线脉冲宽度和注量之间的关系。结果表明: 随着脉冲X射线脉宽增加，双极晶体管烧毁能量变化较小，烧毁时间逐渐增加; 随着注量增加，烧毁时间逐渐降低，在5.86 J/cm2以下时，烧毁所需能量基本相同，之后呈指数逐渐增加，并通过曲线拟合得到损伤规律的经验公式。

Using the transmission line and drift diffusion coupling model (TLM-DDM), this paper analyzes the damage effect and mechanism of the silicon bipolar transistor induced by the cable under the X-ray pulse. The result shows that the damage effect can be decided by the lattice temperature of the bipolar transistor, and the burnout point appears first near the n-N+ interface above the center of the collector region. The paper also describes the relationships of the damage energy and burnout time with the X-ray pulse width and fluence in the curve fitting. When the pulse width of the X-ray increases, the damage energy is almost unchanged and the burnout time increases gradually. The burnout time reduces as the X-ray fluence increases, and the damage energy increases after the X-ray fluence exceeds 5.86 J/cm2.