采用气态源分子束外延在InP衬底上生长InAs/InGaAs数字合金应变补偿量子阱激光器.有源区的多量子阱结构由压应变的InAs/In0.53Ga0.47As数字合金三角形势阱和张应变的In0.43Ga0.57As势垒构成.X射线衍射测试表明赝晶生长的量子阱结构具有很高的晶格质量.在100K、130mA连续波工作模式下，激光器的峰值波长达到1.94μm，对应的阈值电流密度为2.58kA/cm2.随着温度升高，激光器的激射光谱出现独特的蓝移现象，这是由于激光器结构中相对较高的内部吸收和弱的光学限制引起最大增益函数斜率降低所导致的.

InAs/InGaAs digital alloy strain-compensated quantum well lasers have been grown on InP substrate by gas source molecular beam epitaxy. Multiple quantum wells composed of compressive InAs/In0.53Ga0.47As digital alloy triangular wells and tensile In0.43Ga0.57As barriers were used as the active region. X-ray diffraction measurements confirmed the pseudomorphic growth and high crystalline quality of the QW structures. The peak emission wavelength of the laser is 1.94μm at 100K under continuous-wave driving current of 130mA, and the threshold current density is 2.58kA/cm2. An unusual blue shift of the laser spectral with the increase of the temperature was found, which is originated from the reduced slope of maximum gain function, due to the relatively high internal absorption and weak optical confinement in the laser structure.