Chinese Optics Letters, 2005, 3 (0s): 31, Published Online: Mar. 5, 2007  

Experimental characterization improving the design of InGaAs/InP APD for single photon detection Download: 595次

Author Affiliations
1 School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631
2 Department of Applied Physics, South China University of Technology, Guangzhou,510641
3 College of Applied Physics, Guangdong University of Technolody, Guangzhou 510090
Abstract
The passively quenched operation of avalanche photodiode (APD) has been used to characterizing InGaAs/InP APD including punch through voltage, avalanche voltage and break down voltage that are all important in the design of APD for single photon detection. The punch through voltage at certain doping level can be related to the thickness of the InP multiplication layer and the thickness of the un-intentionally doped n-type InP layer can be adjusted in according to the experimental data. The analysis indicates that the punch through voltage should be close to the breakdown voltage that can be realized by adjusting the thickness of InP multiplication layer.

Changjun Liao, Jindong Wang, Hua Lu, Xiaodong Peng, Jianping Guo, Rihao Li, Zhengjun Wei, Jinyun Zhou, Jinyuan Feng, Songhao Liu. Experimental characterization improving the design of InGaAs/InP APD for single photon detection[J]. Chinese Optics Letters, 2005, 3(0s): 31.

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