以GaN基功率型发光二极管为核心的半导体照明光源，已经展示了广阔的应用前景，但其流明效率和公认的200 lm/W的路线图目标相比还有较大的发展空间。从材料外延、管芯制作、器件封装和系统应用等方面介绍了半导体照明关键技术的最新进展，其中包括清华大学集成光电子学国家重点实验室的研究成果，并展望了未来的研究方向。

Solid state lighting based on gallium nitrides high power light emitting diodes has brought forth a wide application prospect. But there is still a huge gap between the present performance of the solid state lighting source and the roadmap target (200 lm/W). The latest technology developments of solid state lighting were reviewed from material epitaxy, chip fabrication process, device package and system application design, which also included the study results from state key laboratory on integrated optoelectronics, Tsinghua University, and the future trend was also discussed.