量子电子学报, 2006, 23 (6): 0881, 网络出版: 2010-06-07
基于时域法的单条形InP／InGaAsP－EAM调制器的行波电极的仿真与实验研究
Direct analysis in time domain method for TW electrode on InP/InGaAsP-EAM
光电子学 行波电极 时域法 特征阻抗 损耗系数 optoelectronics traveling wave electrode time-domain method characteristic impedance loss factor
摘要
行波电极(Traveling wave electrode，TW)，是目前广泛采用的一种电极结构，可缩短光载波与调制信号的互作用长度，可有效避免分布电容(Contribution capacity，CR)对调制带宽的限制。基于时域法设计、分析了InP／InGaAsP－EAM调制器行波电极，并与实际制作的EAM的行波型TW进行了特征阻抗Zc、损耗系数α对比，结果表明用时域法设计、计算的TW的特征阻抗、损耗系数与实测的结果符合的较好，特征阻抗约为45Ω，在0～20GHz的频率范围，损耗系数α小于4dB／mm。
Abstract
Traveling wave(TW)electrode structure is widely used for it needs less multi-action length between optical carrier and digital modulation and can get rid of contribution capacity's constraints on modulation bandwidth. Based on time domain method,TW electrode on InP/InGaAsP electronic absorption modulator is simulated,analyzed and compared with the fabrication on characteristic impedance Zc and loss coefficient α. The numeric results calculated by time domain method coincide with measurement well. Characteristic impedance is about 45Ω,and the loss coefficient is less than 4 dB/mm from DC to 20 GHz.
蔡纯, 刘旭, 肖金标, 张明德, 孙小菡. 基于时域法的单条形InP／InGaAsP－EAM调制器的行波电极的仿真与实验研究[J]. 量子电子学报, 2006, 23(6): 0881. CAI Chun, LIU Xu, XIAO Jin-biao, ZHANG Ming-de, SUN Xiao-han. Direct analysis in time domain method for TW electrode on InP/InGaAsP-EAM[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 0881.
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