多模量子点阵列的光致荧光(PL)光谱的温度依赖性研究对于实现高效的量子点光电器件有着非常重要的意义。利用速率方程模型模拟不同密度量子点阵列中的载流子动力学过程。研究表明，高密度量子点阵列中不同尺寸量子点族的PL强度表现不同的温度依赖关系；而低密度量子点阵列不同点族PL强度均随温度衰减。高密度量子点阵列中，载流子被热激发到浸润层后，部分地被大量子点再俘获，即在量子点族间转移；低密度量子点阵列中不同量子点族间的载流子转移受到限制。不同量子点族光致荧光强度比的最大值强烈地依赖于量子点的激活能差。

The understanding of the temperature dependence of the photoluminescence of multimode quantum dot(QD)arrays is essentially important for the realization of efficient photonic devices. The dynamics processes of different density multimode QD arrays were fitted by using the rate equation model. It is shown that,in high dense QD arrays,the intensity of photoluminescence of different QD families behaves different temperature dependence;the intensity of photoluminescence is quenched as the temperature increases in low density QD arrays. In high dense QD arrays,as the temperature increases,the carriers will be thermally excited into the wetting layer from QDs,and then some of them will be recaptured by the big scale QDs,carriers coupling takes place between the different QD families;in low density QD arrays,the carriers transfer between different QD families will be limited. Temperature dependence of maximum of the ratio of photoluminescence intensity of different QD families strongly depends on the difference of thermal activation energies.