量子电子学报, 2007, 24 (2): 0146, 网络出版: 2010-06-07
Li+附着CH3-nFnO2过氧自由基:络合物Li+-CH3-nFnO2(n=0~3)结构与性质的研究
Li+ ion attached to fluoromethyl peroxyl radicals: structure and properties of Li+-CH3-nFnO2(n = 0 ~ 3)Complexes
光谱学 离子附着质谱 分子轨道理论 密度泛涵理论 氟甲基过氧自由基 spectroscopy ion attachment mass spectrometry ab initio molecular orbital theory density functional theory fluoromethyl peroxyl
摘要
采用了从头算分子轨道理论(MP2,非限性的二级微扰理论)和密度泛涵理论(B3LYP),分别在6-31G(d,p),6-311G(d,p),6-311+G(d,p),6-311G(2d,p),和6-311+G(2df,2p)基组上优化CH3-nFnO2-Li+(n=0~3)的几何结构,计算出了相关的NBO电荷分布和锂离子相对于自由基CH3-nFnO2的亲和能。并在同一水平上计算了自由基CH3-nFnO2和络合物CH3-nFnO2-Li+的相关伸缩振动频率。CH3-nFnO2在UB3LYP/6-311G(d,p)得到的振动频率与实验值符合得很好。根据相关的文献报道,我们运用从头算分子轨道理论和密度泛涵理论计算出的锂离子相对于CH3-nFnO2的亲和能都能够表明络合物CH3-nFnO2-Li+在气态下能以一种稳定的物种形态被离子附着质谱检测。
Abstract
The equilibrium geometries,harmonic vibrational frequencies,natural bond orbital(NBO)charge distributions,and the affinity energies of Li+ attachment to CH3-nFnO2(n = 0~3)have been investigated using ab initio molecular orbital theory and density functional theory(DFT).The structures were determined using unrestricted second order M?ller-Plesset(UMP2)and unrestricted Beck's three-parameter Lee-Yang-Parr(UB3LYP)theories in conjunction with 6-31G(d,p),6-311G(d,p),6-311+G(d,p),6-311G(2d,p)and 6-311+G(2df,2p)basis sets,and the stretching vibrational frequencies were investigated for CH3-nFnO2 and CH3-nFnO2Li+,using optimized geometries at the same levels. The calculated vibrational frequencies of radicals at UB3LYP/6-311G(d,p)levels were consistent well with the experimental data. The affinity energies of Li+attachment to CH3-nFnO2(n = 0~ 3),calculated by DFT and ab intio are all large which suggest that CH3-nFnO2Li+ complexes could be possibly detected as stable species in gas phase by ion attachment mass spectrometry.
程爽, 李海洋. Li+附着CH3-nFnO2过氧自由基:络合物Li+-CH3-nFnO2(n=0~3)结构与性质的研究[J]. 量子电子学报, 2007, 24(2): 0146. CHENG Shuang, LI Hai-yang. Li+ ion attached to fluoromethyl peroxyl radicals: structure and properties of Li+-CH3-nFnO2(n = 0 ~ 3)Complexes[J]. Chinese Journal of Quantum Electronics, 2007, 24(2): 0146.