Chinese Optics Letters, 2007, 5 (s1): 154, Published Online: Jul. 15, 2007  

1050-nm high power diode array module Download: 733次

Author Affiliations
1 State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2 Graduate School of the Chinese Academy of Sciences, Beijing 100039
Abstract
High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.

Getao Tao, Shun Yao, Guoguang Lu, Yun Liu, Di Yao, Lijun Wang. 1050-nm high power diode array module[J]. Chinese Optics Letters, 2007, 5(s1): 154.

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