中国激光, 1994, 21 (1): 1, 网络出版: 2007-08-17
用LPE研制的室温连续工作的1.48 μm单量子阱激光器
Room Temperature CW Single Quantum Well Laser at 1.48 μmFabricated by Liquid Phase Epitaxy
摘要
利用液相外延(LPE)技术研制出室温连续工作的InGaAsP/InP分别限制单量子阶(SCH-SQW)双沟平面掩埋(DC-PBH)激光器。室温下，腔面未镀膜的激光器最低阈值电流为23 mA(激光器腔长为200 μm，CW，13 ℃)。激射波长为1.48 μm，最高输出功率达18.8 mW (L=200 μm,CW，18 ℃)。脉冲输出峰值功率大于50 mW(脉冲宽度1 μs、频率1 kHz)，未见功率饱和。量子阱的阱宽为20 nm[1].
Abstract
We have successfully fabricated the room temperature CW InGAsP/InP separated confinement single quantum well(SQW)DC-PBH laser at 1.48 μm by liquid phase epitaxy for the first time in our country. The lowest threshold current at room temperature is 23 mA for the cavity length of 200 μm The highest CW output power is 18.8 mW per facet without mirror coating. The power saturation doesn't occur yet while the pulsed output power is higher than 50 mW. The thicknesses of active layer and transition layer in quantum well are 20 nm and 3 nm, respectively.
杨志坚, 党小忠, 陈娓兮, 王舒民, 章蓓, 陈高庭. 用LPE研制的室温连续工作的1.48 μm单量子阱激光器[J]. 中国激光, 1994, 21(1): 1. 杨志坚, 党小忠, 陈娓兮, 王舒民, 章蓓, 陈高庭. Room Temperature CW Single Quantum Well Laser at 1.48 μmFabricated by Liquid Phase Epitaxy[J]. Chinese Journal of Lasers, 1994, 21(1): 1.
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