本文报道了GaAs非对称X结波导耦合器的工作原理.该器件制作在n-/n+GaAs外延材料上.文中采用有效折射率法分析了这个耦合器的分离角、波导脊高及其两个非对称波导传播常数差之间的关系.器件在λ＝1.15 μm下测量，得到了小于-2.9 dB的分光性能和小于-20 dB的串音比.

We report on the GaAs asymmetric X-junction waveguide coupler. The mechanism of this coupler is discussed. The device is made on n-/n+ GaAs epitaxial material. The relation among the mode sorting angle and waveguide ridge height and the difference between the propagating constants of two asymmetric waveguides is analyzed by using an effective-index approximation. The device is characterized by a power division of -2.9 dB and a crosstalk ratio of less than -20 dB. It is shown that this device could be applied to switcher and optical sensor.