光学学报, 1995, 15 (2): 157, 网络出版: 2007-08-17
1.3 μm注入锁定半导体激光器及其远场特性
Injection Locking and Far-Field Distribution of 1.3 μm Semiconductor Lasers
摘要
报道了利用1.3 μm分布反馈(DFB)半导体激光器注入锁定普通半导体激光器后的模式及其远场分布特性实验。在不加隔离器和主被动激光器偏振方向相互垂直的情况下，获得了静态和动态单纵模运转，并观察和测量了普通半导体激光器注入锁定前后输出光的远场分布，最后对实验结果进行了讨论。
Abstract
The injection-locking experiments of a slave semiconductor laser by a 1. 3 μmDFB master laser diode and its far-field distribution measurement are reported for the firsttime. The static and dynamic single-mode operation have been obtained when a isolator isnot used and specially the polarization of the master and slave laser is perpendicular, atlast the results are discussed.
徐建华, 张位在, 丁浩, 干福熹. 1.3 μm注入锁定半导体激光器及其远场特性[J]. 光学学报, 1995, 15(2): 157. 徐建华, 张位在, 丁浩, 干福熹. Injection Locking and Far-Field Distribution of 1.3 μm Semiconductor Lasers[J]. Acta Optica Sinica, 1995, 15(2): 157.
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